| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHD10N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | 3 | 0°C | 175°C | 76 K |
| PHP10N40E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 90 K |
| PHP10N40E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 90 K |
| PHP10N40E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 90 K |
| PHP10N40E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 90 K |
| PHP10N40E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 90 K |
| PHP10N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 21 K |
| PHX10N40E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT186A | 3 | -55°C | 150°C | 75 K |
| PNP10N10E | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 11 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 71 K |
| Z0110NN | 1A TRIACS | SGS-Thomson-Microelectronics | - | - | - | - | 109 K |
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