| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXFR10N100Q | 1000V HiPerFET power MOSFET | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 33 K |
| IXFT10N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 75 K |
| IXTH10N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 106 K |
| IXTM10N100 | 1000V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 106 K |
| PHD10N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | 3 | 0°C | 175°C | 76 K |
| PHP10N10E | 100 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 56 K |
| PNP10N10E | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 11 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 71 K |
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