| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO247 | 3 | -55°C | 150°C | 227 K |
| EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO3 | 3 | -55°C | 150°C | 227 K |
| EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO3P | 3 | -55°C | 150°C | 227 K |
| ECF10N25 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range. | distributor | TO3 | 3 | -55°C | 150°C | 64 K |
| R1210N292D-TL | PWM step-up DC/DC converter. Output voltage 2.9V. External tr. driver. Oscillator frequency 180kHz. Taping specification TL | distributor | - | 5 | -40°C | 85°C | 217 K |
| VN2210N2 | 100V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 44 K |
| ZXT10N20DE6TA | 20 V NPN silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 230 K |
| ZXT10N20DE6TA | 20 V NPN silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 230 K |
| ZXT10N20DE6TC | 20 V NPN silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 230 K |
| ZXT10N20DE6TC | 20 V NPN silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 230 K |
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