| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| G10S1A-DC3 | Relay. Nominal voltage 3VDC. Coil resistance(+-10%) 20W. Contact material & rating: AgCdO,6A. Contact arrangement: 1 form A. Endosure: sealed. | distributor | - | 5 | -30°C | 60°C | 51 K |
| G10S1A-DC5 | Relay. Nominal voltage 5VDC. Coil resistance(+-10%) 56W. Contact material & rating: AgCdO,6A. Contact arrangement: 1 form A. Endosure: sealed. | distributor | - | 5 | -30°C | 60°C | 51 K |
| G10S1A-DC6 | Relay. Nominal voltage 6VDC. Coil resistance(+-10%) 80W. Contact material & rating: AgCdO,6A. Contact arrangement: 1 form A. Endosure: sealed. | distributor | - | 5 | -30°C | 60°C | 51 K |
| G10S1A-DC9 | Relay. Nominal voltage 9VDC. Coil resistance(+-10%) 180W. Contact material & rating: AgCdO,6A. Contact arrangement: 1 form A. Endosure: sealed. | distributor | - | 5 | -30°C | 60°C | 51 K |
| IXFN100N10S1 | 100V HiPerFET power MOSFET with schottky diodes | distributor | - | 4 | -40°C | 150°C | 99 K |
| MAS110S10 | 1000V fast turn-off asymmetric thyristor/diode module | distributor | - | 4 | -40°C | 125°C | 67 K |
| PDM4M4110S15M | 512K x 32 CMOS static RAM module | distributor | SIMM | 72 | 0°C | 70°C | 271 K |
| PDM4M4110S15Z | 512K x 32 CMOS static RAM module | distributor | ZIP | 72 | 0°C | 70°C | 271 K |
| VT73LVP10S1 | TTL to differential LVPECL translator with enable | distributor | SOIC | 8 | -40°C | 85°C | 69 K |
| VT73LVP10S1X | TTL to differential LVPECL translator with enable | distributor | SOIC | 8 | -40°C | 85°C | 69 K |
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