| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ISPLSI2032VE-110LB49 | 110 MHz 3.3V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | CPGA | 49 | 0°C | 70°C | 179 K |
| ISPLSI2032VL-110LB49 | 110 MHz 2.5V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | CPGA | 49 | -55°C | 125°C | 156 K |
| ISPLSI2032VL-110LJ44 | 110 MHz 2.5V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | PLCC | 44 | -55°C | 125°C | 156 K |
| ISPLSI2032VL-110LJ44 | 110 MHz 2.5V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | PLCC | 44 | -55°C | 125°C | 156 K |
| ISPLSI2032VL-110LT44 | 110 MHz 2.5V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | TQFP | 44 | -55°C | 125°C | 156 K |
| ISPLSI2032VL-110LT48 | 110 MHz 2.5V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | TQFP | 48 | -55°C | 125°C | 156 K |
| ISPLSI5512VA-110LB272 | 110 MHz in-system prommable 3.3V superWIDE high density PLD | Lattice-Semiconductor-Corporation | BGA | 272 | -55°C | 125°C | 331 K |
| ISPLSI5512VA-110LB272 | 110 MHz in-system prommable 3.3V superWIDE high density PLD | Lattice-Semiconductor-Corporation | BGA | 272 | -55°C | 125°C | 331 K |
| ISPLSI5512VA-110LB388 | 110 MHz in-system prommable 3.3V superWIDE high density PLD | Lattice-Semiconductor-Corporation | BGA | 388 | -55°C | 125°C | 331 K |
| ISPLSI5512VA-110LQ208 | 110 MHz in-system prommable 3.3V superWIDE high density PLD | Lattice-Semiconductor-Corporation | PQFP | 208 | -55°C | 125°C | 331 K |
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