| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1107 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 39 K |
| F1108 | 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 41 K |
| GMS81C1102 | ROM/RAM size: 2K/128 bytes, 2.2-6 V , 1-8 MHz,8-bit single-chip microcontroller | distributor | DIP | 16 | -20°C | 85°C | 1 M |
| GMS87C1102 | ROM/RAM size: 2K/128 bytes, 2.2-6 V , 1-8 MHz,8-bit single-chip microcontroller | distributor | DIP | 16 | -20°C | 85°C | 1 M |
| J110A | N-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 92 K |
| J110A | Low noise N-channel JFET switch | Linear-Integrated-System-Inc-Linear-Systems | - | 3 | -65°C | 200°C | 92 K |
| OM6110SA | 200V N-channel MOSFET | distributor | - | 3 | -55°C | 150°C | 44 K |
| SMPJ110A | N-Channel silicon junction field-effect transistor | distributor | SMD | 3 | - | - | 92 K |
| XC40110XV-08HQ240C | Field programmable gate arrays. VCCINT = 2.3V to 2.7V and VCCIO = 3.3 to 3.6V . | distributor | - | 240 | 0°C | 85°C | 142 K |
| XC40110XV-09HQ240C | Field programmable gate arrays. VCCINT = 2.3V to 2.7V and VCCIO = 3.3 to 3.6V . | distributor | - | 240 | 0°C | 85°C | 142 K |
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