| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AT-110TR | Frequency 0.5-2 GHz, 30dB, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | - | 8 | -40°C | 85°C | 112 K |
| MA4M1100 | 100 V, MNS microwave chip capacitor | M-A-COM---manufacturer-of-RF | - | - | -55°C | 200°C | 40 K |
| MAAM71100 | 7-11 GHz, GaAs MMIC power amplifier | M-A-COM---manufacturer-of-RF | - | - | - | - | 203 K |
| MLO81100-01650 | 1600-1700 MHz, Surface mount voltage controlled oscillator PCS | M-A-COM---manufacturer-of-RF | LSM | 4 | -20°C | 70°C | 97 K |
| MLO81100-01700 | 1650-1750 MHz, Surface mount voltage controlled oscillator PCS | M-A-COM---manufacturer-of-RF | LSM | 4 | -20°C | 70°C | 97 K |
| MLO81100-01850 | 1800-1900 MHz, Surface mount voltage controlled oscillator DCS | M-A-COM---manufacturer-of-RF | LSM | 4 | -20°C | 70°C | 33 K |
| MLO81100-01960 | 1930-1990 MHz, Surface mount voltage controlled oscillator PCS | M-A-COM---manufacturer-of-RF | LSM | 4 | -20°C | 70°C | 101 K |
| PH1214-110M | 1200-1400 MHz,110 W, 150 ms pulse,radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 52 K |
| PH2226-110M | 2250-2550 MHz,110 W, 100 ms pulse, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 99 K |
| PH2729-110M | 2700-2900 MHz, 110 W,100 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 156 K |
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