| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HI1109 | 160V 100mA PNP epitaxial planar transistor | distributor | - | 3 | - | - | 30 K |
| HJ1109 | Emitter to base voltage:5V 100mA PNP epitaxial planar transistor | distributor | - | 3 | - | - | 31 K |
| HSB1109 | Emitter to base voltage:5V 100mA PNP epitaxial planar transistor | distributor | - | 3 | - | - | 33 K |
| HSB1109 | Emitter to base voltage:5V 100mA PNP epitaxial planar transistor | distributor | - | 3 | - | - | 33 K |
| HSB1109S | Emitter to base voltage:5V 100mA PNP epitaxial planar transistor for low frequency and high voltage amplifier applications | distributor | - | 3 | - | - | 36 K |
| MBRX1100 | 1.0A, 100V ultra fast recovery rectifier | distributor | - | - | - | - | 113 K |
| MUR1100 | 1.0A, 1000V ultra fast recovery rectifier | distributor | - | - | - | - | 84 K |
| TB1100H | 90V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 184 K |
| TB1100L | 90V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 190 K |
| TB1100M | 90V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 187 K |
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