Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1.5KE110A | GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 105V(min), 116V(max). For bidirectional use C or CA suffix. | distributor | - | 2 | -55°C | 175°C | 1 M |
3SMC110A | 110 V, 3000Watt, Uni-directional glass passivated junction transient voltage suppressor | distributor | SMC | - | -65°C | 150°C | 142 K |
CDLL1W110A | 110 V, 1 Watt zener diode | distributor | - | 2 | -65°C | 175°C | 112 K |
EM83110A | RF keyboard encoder | ELAN-Microelectronics-Corp- | PDIP | 28 | 0°C | 70°C | 167 K |
EM83110A | RF keyboard encoder | ELAN-Microelectronics-Corp- | SOP | 28 | 0°C | 70°C | 167 K |
J110A | N-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 92 K |
J110A | Low noise N-channel JFET switch | Linear-Integrated-System-Inc-Linear-Systems | - | 3 | -65°C | 200°C | 92 K |
OPI110A | Optically coupled isolator | distributor | - | 4 | -40°C | 85°C | 231 K |
P6SMB110A | 110 V, 600 Watt, uni-directional glass passivated junction transient voltage suppressor | distributor | SMB | - | -65°C | 150°C | 123 K |
SMPJ110A | N-Channel silicon junction field-effect transistor | distributor | SMD | 3 | - | - | 92 K |
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