| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 3D7110G-2.5 | Delay 2.5 +/-1 ns, monolithic 10-TAP fixed delay line | distributor | DIP | 14 | 0°C | 70°C | 41 K |
| 3D7110G-4 | Delay 4 +/-1.3 ns, monolithic 10-TAP fixed delay line | distributor | DIP | 14 | 0°C | 70°C | 41 K |
| 3D7110G-5 | Delay 5 +/-1.5 ns, monolithic 10-TAP fixed delay line | distributor | DIP | 14 | 0°C | 70°C | 41 K |
| 3D7110G-8 | Delay 8 +/-1.5 ns, monolithic 10-TAP fixed delay line | distributor | DIP | 14 | 0°C | 70°C | 41 K |
| MDA110G | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward output current 1.0A at Ta=75degC. | distributor | - | 4 | -55°C | 125°C | 21 K |
| ZVN2110G | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 43 K |
| ZVN2110G | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 43 K |
| ZVNL110G | N-channel enhancement mode low threshold vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 20 K |
| ZVNL110G | N-channel enhancement mode low threshold vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 20 K |
| ZVP2110G | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 102 K |
| ZVP2110G | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 102 K |
| [1] [2] 3 [4] |
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