| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 61113-001 | 40V general purpose (PNP) transistor surface mount package: 2N2369AUB | distributor | LCC | 3 | -65°C | 125°C | 81 K |
| 61113-002 | 40V general purpose (PNP) transistor surface mount package: 2N2369AUB | distributor | LCC | 3 | -65°C | 125°C | 81 K |
| 61113-003 | 40V general purpose (PNP) transistor surface mount package: 2N2369AUB | distributor | LCC | 3 | -65°C | 125°C | 81 K |
| 61113-004 | 40V general purpose (PNP) transistor surface mount package: 2N2369AUB | distributor | LCC | 3 | -65°C | 125°C | 81 K |
| 61113-005 | 40V general purpose (PNP) transistor surface mount package: 2N2369AUB | distributor | LCC | 3 | -65°C | 125°C | 81 K |
| PH1113-100 | 1100-1300 MHz,100 W, 3 ms pulse,radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 62 K |
| SMD1113S | 10-bit data acquisition system for autonomous environmental monitoring | distributor | SOIC | 14 | -55°C | 125°C | 423 K |
| TEA1113T | 12 V, Low voltage versatile telephone transmission circuit with dialler interface | Philips-Semiconductors | SO | 16 | -25°C | 75°C | 128 K |
| VTB1113 | Process photodiode. Isc = 60 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | - | 2 | -40°C | 110°C | 29 K |
| VTE1113 | GaAs infrared emitting diode. Irradiance(typ) 15 mW/cm2 at distance 36 mm, diameter 6.4 mm. | distributor | - | 2 | -55°C | 125°C | 25 K |
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