| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1120 | 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 44 K |
| GMS34112TK | Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer | distributor | SOP | 20 | -20°C | 70°C | 328 K |
| GMS34112TM | Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer | distributor | DIP | 20 | -20°C | 70°C | 328 K |
| GMS34112TW | Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer | distributor | DIP | 20 | -20°C | 70°C | 328 K |
| GMS81C2112K | ROM/RAM size:12 Kb/448 bytes,2.7-5.5 V, 1-4.5 MHz, CMOS single-chip 8-bit microcontroller | distributor | SDIP | 42 | -40°C | 85°C | 1 M |
| GMS81C2112Q | ROM/RAM size:12 Kb/448 bytes,2.7-5.5 V, 1-4.5 MHz, CMOS single-chip 8-bit microcontroller | distributor | MQFP | 44 | -40°C | 85°C | 1 M |
| LMU112JC25 | 12 x 12-bit parallel multiplier. Speed 25ns | distributor | PLCC | 52 | 0°C | 70°C | 46 K |
| LMU112JC50 | 12 x 12-bit parallel multiplier. Speed 50ns | distributor | PLCC | 52 | 0°C | 70°C | 46 K |
| LMU112PC25 | 12 x 12-bit parallel multiplier. Speed 25ns | distributor | Plastic DIP | 48 | 0°C | 70°C | 46 K |
| OM6112SA | 500V N-channel MOSFET | distributor | - | 3 | -55°C | 150°C | 44 K |
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