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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
50S116T-5High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mAdistributorTSOP500°C70°C1 M
50S116T-6High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mAdistributorTSOP500°C70°C1 M
50S116T-7High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mAdistributorTSOP500°C70°C1 M
GS71116TP-1212ns 64K x 16 1Mb asynchronous SRAMdistributorTSOP440°C70°C220 K
GS71116TP-1515ns 64K x 16 1Mb asynchronous SRAMdistributorTSOP440°C70°C220 K
GS71116TP-15I15ns 64K x 16 1Mb asynchronous SRAMdistributorTSOP44-40°C85°C220 K
TLC116ASensitive gate triac, 200V, 3ASGS-Thomson-MicroelectronicsTL Plastic3-40°C110°C52 K
TLC116DSensitive gate triac, 200V, 3ASGS-Thomson-MicroelectronicsTL Plastic3-40°C110°C52 K
TLC116SSensitive gate triac, 200V, 3ASGS-Thomson-MicroelectronicsTL Plastic3-40°C110°C52 K
TLC116TSensitive gate triac, 200V, 3ASGS-Thomson-MicroelectronicsTL Plastic3-40°C110°C52 K
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