| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BAS116LT1 | 75 V, 200 mA, switching diode | distributor | - | 3 | - | - | 37 K |
| GS78116B-10 | 10ns 512K x 16 8Mb asynchronous SRAM | distributor | PBGA | 119 | 0°C | 70°C | 412 K |
| GS78116B-10I | 10ns 512K x 16 8Mb asynchronous SRAM | distributor | PBGA | 119 | -40°C | 85°C | 412 K |
| GS78116B-12 | 12ns 512K x 16 8Mb asynchronous SRAM | distributor | PBGA | 119 | 0°C | 70°C | 412 K |
| GS78116B-12I | 12ns 512K x 16 8Mb asynchronous SRAM | distributor | PBGA | 119 | -40°C | 85°C | 412 K |
| GS78116B-15 | 15ns 512K x 16 8Mb asynchronous SRAM | distributor | PBGA | 119 | 0°C | 70°C | 412 K |
| GS78116B-15I | 15ns 512K x 16 8Mb asynchronous SRAM | distributor | PBGA | 119 | -40°C | 85°C | 412 K |
| MMUN2116RLT1 | 50 V, bias resistor transistor | distributor | - | 3 | -65°C | 150°C | 266 K |
| MUN2116RT1 | 50 V, bias resistor transistor | distributor | - | 3 | - | - | 310 K |
| MUN2116T1 | 50 V, bias resistor transistor | distributor | - | 3 | -55°C | 150°C | 160 K |
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