| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HYB3116160BSJ-50 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 258 K |
| HYB3116160BSJ-60 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 258 K |
| HYB3116160BSJ-70 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 258 K |
| HYB3116160BST-50 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 258 K |
| TDSG1160 | Green (565 nm) 7-segment display | Vishay-Telefunken | - | - | - | - | 126 K |
| TDSL1160 | Low-curr. red (635 nm) 7-segment display | Vishay-Telefunken | - | - | - | - | 81 K |
| TDSO1160 | High-eff. red (635 nm) 7-segment display | Vishay-Telefunken | - | - | - | - | 126 K |
| TDSR1160 | Red (660 nm) 7-segment display | Vishay-Telefunken | - | - | - | - | 126 K |
| TIC116N | Silicon controlled rectifier | Power-Innovations | - | - | - | - | 111 K |
| TIC116S | Silicon controlled rectifier | Power-Innovations | - | - | - | - | 111 K |
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