Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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EDE5116GBSA-4A-E | 512M; DRR-II SDRAM | distributor | BGA | 64 | 0°C | 70°C | 381 K |
EDE5116GBSA-5A-E | 512M; DRR-II SDRAM | distributor | BGA | 64 | 0°C | 70°C | 381 K |
EDS5116ABTA-6A | 512M; 166MHz SDRAM | distributor | TSOP | 54 | 0°C | 70°C | 564 K |
EDS5116ABTA-6B | 512M; 166MHz SDRAM | distributor | TSOP | 54 | 0°C | 70°C | 564 K |
EDS5116ABTA-75 | 512M; 133MHz SDRAM | distributor | TSOP | 54 | 0°C | 70°C | 564 K |
EDS5116ABTA-7A | 512M; 133MHz SDRAM | distributor | TSOP | 54 | 0°C | 70°C | 564 K |
SX1160 | 3.5 GHz RF heads point-to-multipoint transceiver | Watkins-Johnson-WJ-Company | - | - | -40°C | 70°C | 239 K |
SX1161 | 3.5 GHz RF heads point-to-multipoint transceiver | Watkins-Johnson-WJ-Company | - | - | -40°C | 70°C | 239 K |
SX1162 | 3.5 GHz RF heads point-to-multipoint transceiver | Watkins-Johnson-WJ-Company | - | - | -40°C | 70°C | 239 K |
XT2116-801 | 800V fast turn-off asymmetric thyristor | distributor | SO28 | 2 | - | - | 30 K |
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