Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
F1174 | 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 45 K |
MAS1174AC1 | IC for 10.00 - 30.00 MHz VCXO | distributor | - | 9 | -35°C | 85°C | 36 K |
MSM5117405D-60TS-L | 4,194,304-word x 4-bit dynamic RAM | distributor | TSOP | 26 | 0°C | 70°C | 193 K |
MSM5117405D-70TS-L | 4,194,304-word x 4-bit dynamic RAM | distributor | TSOP | 26 | 0°C | 70°C | 193 K |
MSM5117405F-50SJ | 4,194,304-word x 4-bit dynamic RAM | distributor | SOJ | 26 | 0°C | 70°C | 220 K |
MSM5117405F-50TS-K | 4,194,304-word x 4-bit dynamic RAM | distributor | TSOP | 26 | 0°C | 70°C | 220 K |
MSM5117405F-60SJ | 4,194,304-word x 4-bit dynamic RAM | distributor | SOJ | 26 | 0°C | 70°C | 220 K |
MSM5117405F-60TS-K | 4,194,304-word x 4-bit dynamic RAM | distributor | TSOP | 26 | 0°C | 70°C | 220 K |
MSM5117405F-70SJ | 4,194,304-word x 4-bit dynamic RAM | distributor | SOJ | 26 | 0°C | 70°C | 220 K |
MSM5117405F-70TS-K | 4,194,304-word x 4-bit dynamic RAM | distributor | TSOP | 26 | 0°C | 70°C | 220 K |
<< [6] [7] [8] [9] [10] 11 [12] [13] [14] |
---|