| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ALZ11B09 | LZ relay. 16 A Low profile power. Coil voltage 9 V DC. 1 form C. Flux-resistant type. Class B. | distributor | - | 6 | -40°C | 85°C | 64 K |
| ALZ11B12 | LZ relay. 16 A Low profile power. Coil voltage 12 V DC. 1 form C. Flux-resistant type. Class B. | distributor | - | 6 | -40°C | 85°C | 64 K |
| ALZ11B18 | LZ relay. 16 A Low profile power. Coil voltage 18 V DC. 1 form C. Flux-resistant type. Class B. | distributor | - | 6 | -40°C | 85°C | 64 K |
| ALZ11B24 | LZ relay. 16 A Low profile power. Coil voltage 24 V DC. 1 form C. Flux-resistant type. Class B. | distributor | - | 6 | -40°C | 85°C | 64 K |
| ALZ11B48 | LZ relay. 16 A Low profile power. Coil voltage 48 V DC. 1 form C. Flux-resistant type. Class B. | distributor | - | 6 | -40°C | 85°C | 64 K |
| K4F640811B-TC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| K4F640811B-TC-50 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| K4F660811B-TC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| K4F660811B-TC-50 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| PDI1394P11BD | 3-port physical layer interface | Philips-Semiconductors | LQFP | 64 | 0°C | 70°C | 148 K |
| << [24] [25] [26] [27] [28] 29 [30] [31] [32] [33] [34] >> |
|---|
