Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AD7111BQ | +7V; LC2MOS LOGDAC logarythmic D/A converter. For audio attenuators, sonar systems, function generators and digitally controlled AGC system | Analog-Devices | CERDIP | 16 | -40°C | 85°C | 157 K |
ADG411BN | 44V; 30-100mA; LC2MOS precision quad SPST switch. For audio and video routing, automatic test equipment | Analog-Devices | DIP | 16 | -40°C | 85°C | 119 K |
K4F640811B-JC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 367 K |
K4F640811B-JC-50 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 367 K |
K4F640811B-JC-60 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 367 K |
K4F640811B-TC-60 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
K4F660811B-JC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 367 K |
K4F660811B-JC-50 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 367 K |
K4F660811B-JC-60 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 367 K |
K4F660811B-TC-60 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
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