| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HSH2011NIEO | Lamp for photolithography. Power 2000 watts, current 80 amps(DC), voltage 25 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 42 K |
| HV9111NG | High voltage current-mode PWM controller | distributor | SOIC | 14 | - | - | 324 K |
| IXTH11N80 | 800V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 98 K |
| IXTM11N80 | 800V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 98 K |
| ST72E311N4D0 | Bits number of 8 Memory type EPROM Microprocessor/controller features POR/Direct LED/Triac drive/AD Converters/PWM/Watchdog/SPI/SCI Frequency clock 16 MHz Memory si | SGS-Thomson-Microelectronics | DIL | 56 | - | - | 660 K |
| ST72E311N4D0S | Bits number of 8 Memory type EPROM Microprocessor/controller features POR/Direct LED/Triac drive/AD Converters/PWM/Watchdog/LVD/SPI/SCI Frequency clock 16 MHz Memor | SGS-Thomson-Microelectronics | DIL | 56 | - | - | 660 K |
| TC1411NCOA | 1A high-speed MOSFET driver. | TelCom-Semiconductor-Inc- | SOIC | 8 | 0°C | 70°C | 66 K |
| TC1411NCPA | 1A high-speed MOSFET driver. | TelCom-Semiconductor-Inc- | Plastic DIP | 8 | 0°C | 70°C | 66 K |
| TC1411NEOA | 1A high-speed MOSFET driver. | TelCom-Semiconductor-Inc- | SOIC | 8 | -40°C | 85°C | 66 K |
| TC1411NEPA | 1A high-speed MOSFET driver. | TelCom-Semiconductor-Inc- | Plastic DIP | 8 | -40°C | 85°C | 66 K |
| << [29] [30] [31] [32] [33] 34 [35] [36] [37] [38] [39] >> |
|---|
