| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AS29F200B-120SC | 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns | Alliance-Semiconductor-Corporation | SO | 44 | 0°C | 70°C | 375 K |
| AS29F200B-120SI | 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns | Alliance-Semiconductor-Corporation | SO | 44 | -40°C | 85°C | 375 K |
| AS29F200T-120SC | 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns | Alliance-Semiconductor-Corporation | SO | 44 | 0°C | 70°C | 375 K |
| AS29F200T-120SI | 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns | Alliance-Semiconductor-Corporation | SO | 44 | -40°C | 85°C | 375 K |
| AS29F200T-120TC | 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns | Alliance-Semiconductor-Corporation | TSOP | 48 | 0°C | 70°C | 375 K |
| HEDS-1200 | Optical reflective sensor | distributor | - | 8 | -20°C | 70°C | 158 K |
| INA-12063-BLK | 1.5GHz low noise self-biased transistor amplifier | distributor | - | 6 | - | - | 351 K |
| INA-12063-TR1 | 1.5GHz low noise self-biased transistor amplifier | distributor | - | 6 | - | - | 351 K |
| SML120B10 | 1200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO247AD | - | - | - | 20 K |
| SML120B8 | 1200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO247AD | - | - | - | 21 K |
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