Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BA12001B | 90+-10V, 3A high-voltage, high current darlington transistor array | ROHM | DIP | 16 | -20°C | 75°C | 58 K |
DIM1200ESM33-A000 | 3300V single switch IGBT module | distributor | - | 9 | - | - | 194 K |
R1200 | 50 V, 0.5 A high voltage silicon rectifier | distributor | - | 2 | -65°C | 175°C | 41 K |
R1200 | 50 V, 0.5 A high voltage silicon rectifier | distributor | - | 2 | -65°C | 175°C | 41 K |
RMWB12001 | 12 GHz buffer amplifier MMIC | distributor | - | - | -30°C | 85°C | 322 K |
RMWW12001 | 12-24 GHz doubler MMIC | distributor | - | - | -30°C | 85°C | 293 K |
SIM1-1205S-DIL8 | 1 W DC/Dc SIM-DIL module with 12 V input, 5 V/200 mA output | distributor | DIL8 | 8 | -20°C | 71°C | 61 K |
SIM2-1205D-SIL7 | 2 W DC/DC SIM-SIL module with 12 V input, 5 V/200 mA output | distributor | SIL7 | 7 | -20°C | 75°C | 59 K |
SIM2-1205S-SIL7 | 2 W DC/DC SIM-SIL module with 12 V input, 5 V/400 mA output | distributor | SIL7 | 7 | -20°C | 75°C | 59 K |
SIM5-1205S | 3 W DC/DC SIM module with 12 V input, 5 V/600 mA output | distributor | DIL | 24 | -20°C | 71°C | 117 K |
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