| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AM29F040-120EI | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | TSOP | 32 | -40°C | 85°C | 446 K |
| AM29F040-120EIB | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | TSOP | 32 | -40°C | 85°C | 446 K |
| AM29F040-120JC | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | PLCC | 32 | 0°C | 70°C | 446 K |
| AM29F040-120JCB | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | PLCC | 32 | 0°C | 70°C | 446 K |
| AM29F040-120JE | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | PLCC | 32 | -55°C | 125°C | 446 K |
| AM29F040-120JEB | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | PLCC | 32 | -55°C | 125°C | 446 K |
| AM29F040-120JI | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | PLCC | 32 | -40°C | 85°C | 446 K |
| AM29F040-120JIB | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | PLCC | 32 | -40°C | 85°C | 446 K |
| AM29F040-120PE | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | DIP | 32 | -55°C | 125°C | 446 K |
| KM416V1200BTL-5 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
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