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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MA4M1200200 V, MNS microwave chip capacitorM-A-COM---manufacturer-of-RF---55°C200°C40 K
MA4P1200 High power PIN diodeM-A-COM---manufacturer-of-RFSMQ2-65°C175°C311 K
MAAM120001.2-1.75 GHz, low noise GaAs MMIC amplifierM-A-COM---manufacturer-of-RF---55°C125°C191 K
MAAM12000-A11.2-1.75 GHz low noise GaAs MMIC amplifierM-A-COM---manufacturer-of-RFCR8-55°C100°C441 K
MAAM12000-A1G1.2-1.75 GHz low noise GaAs MMIC amplifierM-A-COM---manufacturer-of-RFCR8-55°C100°C441 K
MAAM712007.5-12 GHz,low noise GaAs MMIC amplifierM-A-COM---manufacturer-of-RF---55°C125°C193 K
MAAM71200-H17.5-12 GHz,low noise GaAs MMIC amplifierM-A-COM---manufacturer-of-RFCR6--96 K
PDU54-1200Delay 1200 +/-200 ns, 4-BIT, ECL-interfaced programmable delay linedistributorDIP240°C70°C42 K
R1200High voltage silicon rectifier. Max recurrent peak reverse voltage 1200V, max RMS voltage 840V, max DC blocking voltage 1200V. Max average forward rectified current 500mA at Ta=50degC.distributor-2-65°C175°C19 K
R1200FHigh voltage fast recovery rectifier. Max recurrent peak reverse voltage 1200V, max RMS voltage 840V, max DC blocking voltage 1200V. Max average forward rectified current 500mA at Ta=50degC.distributor-2-65°C175°C20 K
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