| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BA12001B | 90+-10V, 3A high-voltage, high current darlington transistor array | ROHM | DIP | 16 | -20°C | 75°C | 58 K |
| BA12003B | 90+-10V, 3A high-voltage, high current darlington transistor array | ROHM | DIP | 16 | -20°C | 75°C | 58 K |
| BA12004B | 90+-10V, 3A high-voltage, high current darlington transistor array | ROHM | DIP | 16 | -20°C | 75°C | 58 K |
| DFM1200EXM12-A000 | 1200V fast recovery diode module | distributor | - | 6 | - | - | 119 K |
| DFM1200FXM12-A000 | 1200V fast recovery diode module | distributor | - | 12 | - | - | 99 K |
| DIM1200ESM33-A000 | 3300V single switch IGBT module | distributor | - | 9 | - | - | 194 K |
| R1200 | 50 V, 0.5 A high voltage silicon rectifier | distributor | - | 2 | -65°C | 175°C | 41 K |
| R1200 | 50 V, 0.5 A high voltage silicon rectifier | distributor | - | 2 | -65°C | 175°C | 41 K |
| RMWB12001 | 12 GHz buffer amplifier MMIC | distributor | - | - | -30°C | 85°C | 322 K |
| RMWW12001 | 12-24 GHz doubler MMIC | distributor | - | - | -30°C | 85°C | 293 K |
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