| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N1200B | 12A silicon power rectifier, 100V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
| 1N1200C | 25A silicon power rectifier, 100V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 128 K |
| 1N1200C | 25A silicon power rectifier, 100V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 128 K |
| M12007 | Power thermistor | distributor | - | 2 | -40°C | 200°C | 796 K |
| R1200F | High voltage fsat recovery rectifier. Max recurrent peak reverse voltage 1200 V. Max average forward rectified current 0.5A. | distributor | - | 2 | -65°C | 150°C | 128 K |
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