| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1208 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| GS71208TP-8 | 8ns 128K x 8 1Mb asynchronous SRAM | distributor | TSOP | 32 | 0°C | 70°C | 379 K |
| IRU1208CS | 1A very low dropout positive adjustable regulator | International-Rectifier | SOIC | 8 | 0°C | 125°C | 114 K |
| QIC1208001 | 1200V, 80A common cathode IGBT module | distributor | - | - | - | - | 33 K |
| R7221208ES | 1200V, 800A fast recovery single diode | distributor | - | - | - | - | 808 K |
| R7221208ES | 1200V, 800A fast recovery single diode | distributor | - | - | - | - | 808 K |
| R7S01208 | 1200V, 800A general purpose single diode | distributor | - | - | - | - | 445 K |
| TG-1208 | 8.3-22.2 KV three electrode high-energy spark gap | distributor | - | 2 | - | - | 195 K |
| US1208CM | Adjustable dual 1A low dropout positive adjustable & fixed regulator | distributor | - | 5 | 0°C | 125°C | 39 K |
| US1208CS | Adjustable dual 1A low dropout positive adjustable & fixed regulator | distributor | SOIC | 8 | 0°C | 125°C | 39 K |
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