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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
F120840 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-4-65°C150°C38 K
GS71208TP-88ns 128K x 8 1Mb asynchronous SRAMdistributorTSOP320°C70°C379 K
IRU1208CS1A very low dropout positive adjustable regulatorInternational-RectifierSOIC80°C125°C114 K
QIC12080011200V, 80A common cathode IGBT moduledistributor----33 K
R7221208ES1200V, 800A fast recovery single diodedistributor----808 K
R7221208ES1200V, 800A fast recovery single diodedistributor----808 K
R7S012081200V, 800A general purpose single diodedistributor----445 K
TG-12088.3-22.2 KV three electrode high-energy spark gapdistributor-2--195 K
US1208CMAdjustable dual 1A low dropout positive adjustable & fixed regulatordistributor-50°C125°C39 K
US1208CSAdjustable dual 1A low dropout positive adjustable & fixed regulatordistributorSOIC80°C125°C39 K
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