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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRFM120AN-CHANNEL POWER MOSFETFairchild-Semiconductor----269 K
IRFR120AN-CHANNEL POWER MOSFETFairchild-Semiconductor----256 K
IRFU120AN-CHANNEL POWER MOSFETFairchild-Semiconductor----256 K
SA120A120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applicationsdistributor-2-55°C175°C601 K
SMAJ120A120.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applicationsdistributor-2-55°C150°C780 K
SMBJ120A120.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applicationsdistributor-2-55°C150°C582 K
SMCJ120A120.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applicationsdistributor-2-55°C150°C607 K
SMDJ120A120.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applicationsdistributor-2-55°C150°C588 K
SMLJ120A120.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applicationsdistributor-2-55°C150°C588 K
SMTBJ120ASMTBJ SiBOD, bi-directional transient voltage protection. Vrm = 120V. Peak pulse current Ipp = 50A (10/1000usec), 150A (8-20us expo).distributor-20°C150°C81 K
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