Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRFM120A | N-CHANNEL POWER MOSFET | Fairchild-Semiconductor | - | - | - | - | 269 K |
IRFR120A | N-CHANNEL POWER MOSFET | Fairchild-Semiconductor | - | - | - | - | 256 K |
IRFU120A | N-CHANNEL POWER MOSFET | Fairchild-Semiconductor | - | - | - | - | 256 K |
SA120A | 120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 601 K |
SMAJ120A | 120.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 150°C | 780 K |
SMBJ120A | 120.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 150°C | 582 K |
SMCJ120A | 120.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 150°C | 607 K |
SMDJ120A | 120.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 150°C | 588 K |
SMLJ120A | 120.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 150°C | 588 K |
SMTBJ120A | SMTBJ SiBOD, bi-directional transient voltage protection. Vrm = 120V. Peak pulse current Ipp = 50A (10/1000usec), 150A (8-20us expo). | distributor | - | 2 | 0°C | 150°C | 81 K |
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