Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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150C120B | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 169 K |
40C120B | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 159 K |
HGT1S2N120BNDS | 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 87 K |
HGT1S2N120BNS | 12A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 85 K |
HGTD2N120BNS | 12A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 85 K |
HGTD2N120BNS | 12A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 85 K |
HGTP2N120BN | 12A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 85 K |
HGTP2N120BND | 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 87 K |
ISO120BG | Precision Low Cost Isolation Amplifier | Burr-Brown-Corporation | 24 | - | -55°C | 125°C | 210 K |
LC864120B | 8-bit single chip microcontroller | SANYO-Electric-Co--Ltd- | DIP52S | 52 | -30°C | 70°C | 318 K |
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