Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1504-120F | Delay 120 +/-6 ns, Fixed dip delay line Td/Tr=5 | distributor | DIP | 16 | -55°C | 125°C | 41 K |
1517-120F | Delay 120 +/-6 ns, 5-TAP DIP delay line Td/Tr=3 | distributor | DIP | 14 | -55°C | 125°C | 37 K |
1519-120F | Delay 120 +/-6 ns, 10-TAP DIP delay line Td/Tr=5 | distributor | DIP | 16 | -55°C | 125°C | 43 K |
ACT-E128K32N-120F2Q | High speed 4 Megabit EEPROM multichip module. Speed 120ns. | distributor | CQFP | 68 | -55°C | 125°C | 171 K |
ACT-F128K32N-120F5Q | High speed 4 Megabit FLASH multichip module. Speed 120ns. | distributor | CQFP | 68 | -55°C | 125°C | 201 K |
ACT-F1M32B-120F14C | High speed 32 Megabit boot block FLASH multichip module. Speed 120ns. | distributor | CQFP | 68 | 0°C | 70°C | 149 K |
ACT-F1M32B-120F14I | High speed 32 Megabit boot block FLASH multichip module. Speed 120ns. | distributor | CQFP | 68 | -40°C | 85°C | 149 K |
ACT-F1M32B-120F14M | High speed 32 Megabit boot block FLASH multichip module. Speed 120ns. | distributor | CQFP | 68 | -55°C | 125°C | 149 K |
AM29F040-120FE | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | TSOP | 32 | -55°C | 125°C | 446 K |
AM29F040-120FEB | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | TSOP | 32 | -55°C | 125°C | 446 K |
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