| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EN27LV512120J | 512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V | distributor | PLCC | 32 | 0°C | 70°C | 160 K |
| EN27LV512120P | 512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V | distributor | PDIP | 28 | 0°C | 70°C | 160 K |
| EN27LV512120PI | 512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V | distributor | PDIP | 28 | -40°C | 85°C | 160 K |
| EN27LV512120T | 512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V | distributor | TSOP | 28 | 0°C | 70°C | 160 K |
| EN27LV512150J | 512Kbit EPROM (64K x 8). Speed 150ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V | distributor | PLCC | 32 | 0°C | 70°C | 160 K |
| EN27LV512150P | 512Kbit EPROM (64K x 8). Speed 150ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V | distributor | PDIP | 28 | 0°C | 70°C | 160 K |
| EN27LV512150T | 512Kbit EPROM (64K x 8). Speed 150ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V | distributor | TSOP | 28 | 0°C | 70°C | 160 K |
| F1210 | 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| F1214 | 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 6 | -65°C | 150°C | 35 K |
| MSK121B-1 | High power dual bridge amplifier | distributor | TO | 8 | -55°C | 125°C | 300 K |
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