| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EDL1216AASA-75-E | 128M; 133MHz DDR SDRAM SO-DIMM | distributor | FBGA | 54 | -25°C | 85°C | 33 K |
| EDL1216AASA-75-E | 128M; 133MHz mobile RAM | distributor | BGA | 54 | -25°C | 85°C | 479 K |
| EDL1216BASA-75-E | 128M; 133MHz DDR SDRAM SO-DIMM | distributor | FBGA | 54 | -25°C | 85°C | 33 K |
| EDL1216CASA-10-E | 128M; 100MHz mobile RAM | distributor | FBGA | 54 | -25°C | 85°C | 467 K |
| EDL1216CASA-75-E | 128M; 133MHz DDR SDRAM SO-DIMM | distributor | FBGA | 54 | -25°C | 85°C | 33 K |
| P6EU-1212ZH30 | Input voltage:12V, output voltage +/-12V (+/-42mA), 3KV isolated 1W unregulated dual output | distributor | SIP | 6 | -40°C | 85°C | 235 K |
| P6EU-1215ZH30 | Input voltage:12V, output voltage +/-15V (+/-34mA), 3KV isolated 1W unregulated dual output | distributor | SIP | 6 | -40°C | 85°C | 235 K |
| RL1210LGO-711 | Linear CMOS spectroscopy sensor. 25 microm pitch, 2.5 mm aperture, 1024 photodiode elements. | distributor | Ceramic DIP | 22 | -78°C | 85°C | 156 K |
| VTT1212 | .040 inche NPN phototransistor. Light current(min) 2.0 mA at H = 20 fc, Vce = 5.0 V. | distributor | - | 3 | -40°C | 100°C | 21 K |
| VTT1214 | .040 inche NPN phototransistor. Light current(min) 4.0 mA at H = 20 fc, Vce = 5.0 V. | distributor | - | 3 | -40°C | 100°C | 21 K |
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