| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DS1217A/16K-25 | Nonvolatile read/write cartridge, 2K x 8, 250ns | Dallas-Semiconductor | - | 28 | 0°C | 70°C | 76 K |
| K9F1216Q0A-DCB0 | 32M x 16 bit NAND flash memory, 1.70 - 1.95V | Samsung-Electronic | TBGA | 63 | 0°C | 70°C | 807 K |
| K9F1216Q0A-DIB0 | 32M x 16 bit NAND flash memory, 1.70 - 1.95V | Samsung-Electronic | TBGA | 63 | -40°C | 85°C | 807 K |
| K9F1216Q0A-HCB0 | 32M x 16 bit NAND flash memory, 1.70 - 1.95V | Samsung-Electronic | TBGA | 63 | 0°C | 70°C | 807 K |
| K9F1216Q0A-HIB0 | 32M x 16 bit NAND flash memory, 1.70 - 1.95V | Samsung-Electronic | TBGA | 63 | -40°C | 85°C | 807 K |
| K9F1216U0A-DCB0 | 32M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TBGA | 63 | 0°C | 70°C | 807 K |
| K9F1216U0A-DIB0 | 32M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TBGA | 63 | -40°C | 85°C | 807 K |
| K9F1216U0A-HCB0 | 32M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TBGA | 63 | 0°C | 70°C | 807 K |
| K9F1216U0A-HIB0 | 32M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TBGA | 63 | -40°C | 85°C | 807 K |
| K9F1216U0A-PIB0 | 32M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TSOP I | 48 | -40°C | 85°C | 807 K |
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