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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SK1284-ZN channel power MOS FETNEC-Electronics-Inc-----381 K
2SK1285N channel power MOS FETNEC-Electronics-Inc-----377 K
2SK1288N-channel power MOS FETNEC-Electronics-Inc-----380 K
MC-4R128CEE6B-653128M-byte(64M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) ModuleNEC-Electronics-Inc-----129 K
MC-4R128CEE6B-745128M-byte(64M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) ModuleNEC-Electronics-Inc-----129 K
MC-4R128CEE6B-845128M-byte(64M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) ModuleNEC-Electronics-Inc-----129 K
MC-4R128CEE6C-653128M-byte(64M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) ModuleNEC-Electronics-Inc-----129 K
MC-4R128CEE6C-745128M-byte(64M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) ModuleNEC-Electronics-Inc-----129 K
MC-4R128CEE6C-845128M-byte(64M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) ModuleNEC-Electronics-Inc-----129 K
MC-4R128CPE6C-653128M-byte(64M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) ModuleNEC-Electronics-Inc-----133 K
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