Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HB52R1289E22-A6B | 128-Mword x 72-bit; 100MHz memory bus; 2-bank module; 1GB registered SDRAM DIMM | distributor | - | 168 | - | - | 168 K |
HB52R1289E22-B6B | 128-Mword x 72-bit; 100MHz memory bus; 2-bank module; 1GB registered SDRAM DIMM | distributor | - | 168 | - | - | 168 K |
HB52RF1289E2-75B | 128-Mword x 72-bit; 133MHz memory bus; 2-bank module; 1GB registered SDRAM DIMM | distributor | - | 168 | - | - | 161 K |
PD45128168G5-A75-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
PD45128168G5-A75A-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
PD45128168G5-A80-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
PD45128441G5-A10-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
PD45128441G5-A75-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
PD45128441G5-A75A-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
PD45128441G5-A80-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
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