| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DS12885 | Real Time Clock | Dallas-Semiconductor | DIP | 24 | - | - | 31 K |
| DS12887 | Real Time Clock | Dallas-Semiconductor | DIP | 24 | - | - | 31 K |
| MT48LC128M4A2TG-75 | 32Meg x 4 x 4banks, CL=3, 133MHz synchronous DRAM | distributor | TSOP | 54 | 0°C | 70°C | 1 M |
| MT48LC128M4A2TG-7E | 32Meg x 4 x 4banks, CL=2, 133MHz synchronous DRAM | distributor | TSOP | 54 | 0°C | 70°C | 1 M |
| VTE1281-1 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
| VTE1281-2 | GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
| VTE1281F | GaAlAs infrared emitting diode. Irradiance(typ) 0.21 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 24 K |
| VTE1281W-1 | GaAlAs infrared emitting diode. Irradiance(typ) 1.6 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
| VTE1281W-2 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
| VTE1285 | GaAlAs infrared emitting diode. Irradiance(typ) 5.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 27 K |
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