Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
1N1128A | 12A silicon power rectifier, 600V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
1N1128A | 12A silicon power rectifier, 600V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
1N1128RA | 12A silicon power rectifier, 600V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
1N4128C | 500mW low noise silicon zener diode. Nominal zener voltage 60V. 2% tolerance. | distributor | - | 2 | -65°C | 200°C | 178 K |
1N4128D | 500mW low noise silicon zener diode. Nominal zener voltage 60V. 1% tolerance. | distributor | - | 2 | -65°C | 200°C | 178 K |
CY7C68013-128AC | High-speed USB peripheral controller, RAM=8K, I/Os=40 | Cypress-Semiconductor | TQFP | 128 | 0°C | 70°C | 534 K |
HFA3128B | Ultra high frequency transistor arrays | Intersil-Corporation | SOIC | 16 | -55°C | 125°C | 57 K |
M95128-BN3 | 128 Kbit (16K x8)serial SPI bus EEPROM with high speed clock, operating = 4.5 V to 5.5 V | SGS-Thomson-Microelectronics | PSDIP | 8 | -40°C | 125°C | 174 K |
T4312816A-6S | 166MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM | distributor | TSOP | 128 | 0°C | 70°C | 711 K |
T4312816A-6S | 166MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM | distributor | TSOP | 128 | 0°C | 70°C | 711 K |
<< [696] [697] [698] [699] [700] 701 [702] [703] [704] [705] [706] >> |
---|