| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1290 | PNP transistor 60V/7A for high-speed switching applications | SANYO-Electric-Co--Ltd- | - | 3 | -55°C | 150°C | 103 K |
| 2SA1291 | PNP transistor 60V/10A for high-speed switching applications | SANYO-Electric-Co--Ltd- | - | 3 | -55°C | 150°C | 103 K |
| 2SA1292 | PNP transistor 60V/15A for high-speed switching applications | SANYO-Electric-Co--Ltd- | - | 3 | -55°C | 150°C | 98 K |
| TC7129CKW | 4-1/2 digit analog-to-digital converters with on-chip LCD drivers | Microchip-Technology-Inc- | PQFP | 44 | 0°C | 70°C | 550 K |
| TC7129CLW | 4-1/2 digit analog-to-digital converters with on-chip LCD drivers | Microchip-Technology-Inc- | PLCC | 44 | 0°C | 70°C | 550 K |
| VTE1291-1 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
| VTE1291-2 | GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
| VTE1291W-1 | GaAlAs infrared emitting diode. Irradiance(typ) 1.6 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 33 K |
| VTE1291W-2 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 33 K |
| VTE1295 | GaAlAs infrared emitting diode. Irradiance(typ) 5.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 27 K |
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