| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1291 | PNP transistor 60V/10A for high-speed switching applications | SANYO-Electric-Co--Ltd- | - | 3 | -55°C | 150°C | 103 K |
| LTC1291BIJ8 | Single chip 12-Bit data acquisition system | Linear-Technology | CERDIP | 8 | -40°C | 85°C | 325 K |
| LTC1291CIJ8 | Single chip 12-Bit data acquisition system | Linear-Technology | CERDIP | 8 | -40°C | 85°C | 325 K |
| LTC1291CMJ8 | Single chip 12-Bit data acquisition system | Linear-Technology | CERDIP | 8 | -55°C | 125°C | 325 K |
| LTC1291DMJ8 | Single chip 12-Bit data acquisition system | Linear-Technology | CERDIP | 8 | -55°C | 125°C | 325 K |
| UT62S12916BS-70LLI | Access time: 70 ns, 128 K x 16 Bit low power CMOS SRAM | distributor | BGA | 48 | -40°C | 85°C | 233 K |
| VTE1291-1 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
| VTE1291-2 | GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
| VTE1291W-1 | GaAlAs infrared emitting diode. Irradiance(typ) 1.6 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 33 K |
| VTE1291W-2 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 33 K |
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