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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M51R16AWG-12LI1048576-bit (65536-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupCSP480°C70°C89 K
M5M5V208FP-12LL2097152-bit (262144-word by 8-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOP320°C70°C76 K
M5M5V208RV-12LL2097152-bit (262144-word by 8-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C76 K
M5M5V208VP-12LL2097152-bit (262144-word by 8-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C76 K
R5312L001AMulti LDO for cellule-phonedistributorQFP32-40°C85°C336 K
R5312L001AMulti LDO for cellule-phonedistributorQFP32-40°C85°C336 K
SHM-12LMUltra-fast, 12-bit linear monolithic sample-hold amplifierdistributorCLCC20-55°C125°C153 K
WS628512LLFPVery low power/volpage CMOS SRAM. 512K x 8 bit. Vcc 2.4V-3.6V. Speed 70nsWing-Shing-Electronic-Co----manufacturer-of-power-semiconductorsSOP320°C70°C399 K
WS628512LLSTVery low power/volpage CMOS SRAM. 512K x 8 bit. Vcc 2.4V-3.6V. Speed 70nsWing-Shing-Electronic-Co----manufacturer-of-power-semiconductorsSTSOP320°C70°C399 K
WS628512LLTVery low power/volpage CMOS SRAM. 512K x 8 bit. Vcc 2.4V-3.6V. Speed 70nsWing-Shing-Electronic-Co----manufacturer-of-power-semiconductorsTSOP320°C70°C399 K
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