Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IXFH12N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 232 K |
IXFM12N100 | 1000V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 232 K |
IXFM12N100 | 1000V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 232 K |
IXGA12N100 | 1000V IGBT | distributor | - | 3 | -55°C | 150°C | 51 K |
IXGA12N100A | 1000V IGBT | distributor | - | 3 | -55°C | 150°C | 51 K |
IXGH12N100 | 1000V low voltage high speed IGBT | distributor | - | 3 | -55°C | 150°C | 35 K |
IXGH12N100A | 1000V low voltage high speed IGBT | distributor | - | 3 | -55°C | 150°C | 35 K |
IXTH12N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 106 K |
IXTM12N100 | 1000V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 106 K |
R3112N19C-TR | Low voltage detector with output delay. Output voltage 1.9V. Output type CMOS. Standard taping type TR. | distributor | - | 5 | -40°C | 85°C | 267 K |
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