Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HI13003 | Emitter to base voltage:9V 1.5A NPN epitaxial planar transistor for high-voltage, high-speed power switching inductive circuit where fall time is critical | distributor | - | 3 | - | - | 34 K |
HM1300 | Emitter to base voltage:20V; silicon PNP epitaxial transistor | distributor | SOT89 | 3 | - | - | 33 K |
HMJE13003 | Emitter to base voltage:9V; 1.5A NPN epitaxial planar transistor | distributor | - | 3 | - | - | 38 K |
HMJE13003D | Emitter to base voltage:9V; 1.5A NPN epitaxial planar transistor | distributor | - | 3 | - | - | 44 K |
HMJE13003T | Emitter to base voltage:8V; 1A NPN epitaxial planar transistor for high voltage | distributor | - | 3 | - | - | 38 K |
HMJE13005 | Emitter to base voltage:9V; 4A NPN epitaxial planar transistor | distributor | - | 3 | - | - | 41 K |
L-H513008B | 5.0 mm dia LED lamp, with H401 holder | distributor | - | 2 | - | - | 71 K |
TB1300H | 120V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 184 K |
TB1300L | 120V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 190 K |
TB1300M | 120V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 187 K |
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