Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
1310 | 1000 V single phase bridge 4.5-5 A forward current, 3000 ns recovery time | distributor | - | 4 | -55°C | 150°C | 138 K |
2021-1310-00 | Short circuits and dust caps | M-A-COM---manufacturer-of-RF | - | - | - | - | 150 K |
2021-1311-00 | Short circuits and dust caps | M-A-COM---manufacturer-of-RF | - | - | - | - | 150 K |
2021-1311-02 | Short circuits and dust caps | M-A-COM---manufacturer-of-RF | - | - | - | - | 150 K |
2021-1314-00 | Short circuits and dust caps | M-A-COM---manufacturer-of-RF | - | - | - | - | 150 K |
2021-1314-02 | Short circuits and dust caps | M-A-COM---manufacturer-of-RF | - | - | - | - | 150 K |
AM-131PIN | 5-500 MHz, high performance amplifier, 10 dB gain | M-A-COM---manufacturer-of-RF | TO | 4 | -55°C | 85°C | 249 K |
IRF1310NS | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 156 K |
IRF5EA1310 | HEXFET power MOSFET surface mount. BVDSS = 100V, RDS(on) = 0.036 Ohm, ID = 23A | International-Rectifier | LCC | 28 | -55°C | 150°C | 238 K |
IRF5Y1310CM | HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.044 Ohm, ID = 18A | International-Rectifier | - | 3 | -55°C | 150°C | 107 K |
<< [45] [46] [47] [48] [49] 50 [51] [52] [53] [54] [55] >> |
---|