| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EDI9LC644V1312BC | SSRAM access:133MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM | distributor | - | 153 | - | - | 1 M |
| HUF76131SK8 | 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 309 K |
| KTK5131E | SMOS FET/ Analog Switch Application | Korea-Electronics-Co--Ltd- | - | - | - | - | 428 K |
| KTK5131S | SMOS FET/ Analog Switch Application | Korea-Electronics-Co--Ltd- | - | - | - | - | 82 K |
| QRD1313 | REFLECTIVE OBJECT SENSOR | Fairchild-Semiconductor | - | - | - | - | 181 K |
| WED9LC6416V1310BC | SSRAM access 133MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
| WED9LC6416V1310BI | SSRAM access 133MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
| WED9LC6416V1312BC | SSRAM access 133MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
| WED9LC6416V1312BC | SSRAM access 133MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
| WED9LC6416V1312BI | SSRAM access 133MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
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