Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1310 | 1000 V single phase bridge 4.5-5 A forward current, 3000 ns recovery time | distributor | - | 4 | -55°C | 150°C | 138 K |
1310F | 1000 V single phase bridge 4.5-5 A forward current, 500 ns recovery time | distributor | - | 4 | -55°C | 150°C | 138 K |
1310UF | 1000 V single phase bridge 4.5-5 A forward current, 70 ns recovery time | distributor | - | 4 | -55°C | 150°C | 138 K |
2021-1310-00 | Short circuits and dust caps | M-A-COM---manufacturer-of-RF | - | - | - | - | 150 K |
DK1310FXK | 1000V fast switching thyristor | distributor | TO94 | 2 | - | - | 307 K |
DK1310FXM | 1000V fast switching thyristor | distributor | TO94 | 2 | - | - | 307 K |
IRF1310N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A. | International-Rectifier | - | 3 | -55°C | 175°C | 96 K |
IRF1310NS | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 156 K |
IRF5EA1310 | HEXFET power MOSFET surface mount. BVDSS = 100V, RDS(on) = 0.036 Ohm, ID = 23A | International-Rectifier | LCC | 28 | -55°C | 150°C | 238 K |
IRF5Y1310CM | HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.044 Ohm, ID = 18A | International-Rectifier | - | 3 | -55°C | 150°C | 107 K |
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