| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SK1332 | N-channel junction silicon FET, low-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2058 | 3 | - | - | 86 K |
| CXA1330S | Dolby B/C Type Noise Reduction System | Sony-Semiconductor | - | - | - | - | 381 K |
| CXA1331M | Dolby B/C Type Noise Reduction System | Sony-Semiconductor | - | - | - | - | 381 K |
| CXA1331S | Dolby B/C Type Noise Reduction System | Sony-Semiconductor | - | - | - | - | 381 K |
| CXA1332M | Dolby B/C Type Noise Reduction System | Sony-Semiconductor | - | - | - | - | 381 K |
| CXA1332S | Dolby B/C Type Noise Reduction System | Sony-Semiconductor | - | - | - | - | 381 K |
| INA133U | High-Speed, Precision DIFFERENCE AMPLIFIERS | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 190 K |
| INA133U/2K5 | High-Speed, Precision DIFFERENCE AMPLIFIERS | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 190 K |
| INA133UA | High-Speed, Precision DIFFERENCE AMPLIFIERS | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 190 K |
| SLD1133VS | 650nm Index-Guided Red Laser Diode | Sony-Semiconductor | - | - | - | - | 91 K |
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