| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2023-6133-06 | 8-12.4 GHz, Air dielectric directional coupler low loss, octave bandwidth | M-A-COM---manufacturer-of-RF | - | - | - | - | 83 K |
| IF1330 | N-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 59 K |
| IF1331 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 62 K |
| MA4E1339A-1141T | 20 V, Silicon medium barrier schottky diode | M-A-COM---manufacturer-of-RF | SOD | 2 | -55°C | 125°C | 118 K |
| MA4E1339A-1146T | 20 V, Silicon medium barrier schottky diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -55°C | 125°C | 118 K |
| MA4E1339A-287T | 20 V, Silicon medium barrier schottky diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -55°C | 125°C | 118 K |
| MA4E1339B-1146T | 20 V, Silicon medium barrier schottky diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -55°C | 125°C | 118 K |
| MA4E1339B-287T | 20 V, Silicon medium barrier schottky diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -55°C | 125°C | 118 K |
| MA4E1339E-1068T | 20 V, Silicon medium barrier schottky diode | M-A-COM---manufacturer-of-RF | SOT | 4 | -55°C | 125°C | 118 K |
| OP133W | GaAs hermetic infrared emitting diode | distributor | - | 2 | -65°C | 125°C | 192 K |
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