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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BSS138-750V; 200mA N-channel enchancement mode field effect transistordistributor-3-55°C125°C92 K
BSS138DW50V; 200mA dual N-channel enchancement mode field effect transistordistributor-6-55°C150°C58 K
BSS138W50V; 200mA N-channel enchancement mode field effect transistordistributor-3-55°C150°C90 K
DS138608-120RAMified watchdog timekeeper 8k x 8, 120nsDallas-SemiconductorDIP320°C70°C263 K
DS138632-120RAMified watchdog timekeeper 32k x 8, 120nsDallas-SemiconductorDIP320°C70°C263 K
DS1386P08-120RAMified watchdog timekeeper 8k x 8, 120nsDallas-SemiconductorPowerCap340°C70°C263 K
DS1386P32-120RAMified watchdog timekeeper 32k x 8, 120nsDallas-SemiconductorPowerCap340°C70°C263 K
GS820H32AQ-138I138MHz 9.7ns 64K x 32 2M synchronous burst SRAMdistributorQFP1000°C70°C341 K
GS820H32AT-138I138MHz 9.7ns 64K x 32 2M synchronous burst SRAMdistributorTQFP100-40°C85°C341 K
SAA13893.3 V,customer specific, CMOS compatible enable/disable crystal clock oscillatordistributorSMD8--389 K
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