| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| COM140T | 100V 14Amp N-channel MOSFET | distributor | Hermetic | 3 | -55°C | 125°C | 41 K |
| F1401 | 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 42 K |
| GMS34140TK | Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer | distributor | SOP | 24 | -20°C | 70°C | 328 K |
| GMS34140TK | Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer | distributor | DIP | 24 | -20°C | 70°C | 328 K |
| GMS34140TM | Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer | distributor | SOP | 24 | -20°C | 70°C | 328 K |
| GMS34140TM | Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer | distributor | DIP | 24 | -20°C | 70°C | 328 K |
| GMS34140TW | Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer | distributor | SOP | 24 | -20°C | 70°C | 328 K |
| GMS34140TW | Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer | distributor | DIP | 24 | -20°C | 70°C | 328 K |
| GMS36140T | Program memory: 1,024 bytes, 300KHz-1MHz, 2-3.6 V, 4 BIT single chip microcomputer | distributor | DIP | 24 | -20°C | 70°C | 813 K |
| IF140A | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 92 K |
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