Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FM140L | Surface mount schottky barrier rectifier. MaxVRRM = 40V, maxVRMS = 28V, maxVDC = 40V. Current 1.0A. | distributor | - | 2 | -65°C | 125°C | 89 K |
GMS87C1404 | ROM/RAM size:4 Kb/192 bytes, 2.2-5.5 V, 8 BIT single chip microcontroller | distributor | SOP | 28 | -20°C | 85°C | 853 K |
IRF1404 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A. | International-Rectifier | - | 3 | -55°C | 175°C | 107 K |
IRF1404L | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A. | International-Rectifier | - | 3 | -55°C | 175°C | 306 K |
IRF1404S | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 306 K |
IRF1405 | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 169A. | International-Rectifier | - | 3 | -55°C | 175°C | 116 K |
IRF1405L | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 131A. | International-Rectifier | - | 3 | -55°C | 175°C | 154 K |
IRF1405S | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 131A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 154 K |
PHA2731-140L | 2700-3100 MHz, 140 W, 300 ms, radar pulsed power module | M-A-COM---manufacturer-of-RF | - | - | -30°C | 100°C | 84 K |
RL1N1400F | Photoflash rectifier. Max recurrent peak reverse voltage 1400V, max RMS voltage 960V, max DC blocking voltage 1400V. Max average forward current 0.5A at Ta=55degC. | distributor | - | 2 | -65°C | 175°C | 23 K |
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